MoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contacts

Balaji, YashwanthYashwanthBalajiSmets, QuentinQuentinSmetsSzabo, AronAronSzaboMascaro, MarcoMarcoMascaroLin, DennisDennisLinAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRaduLuisier, MathieuMathieuLuisierGroeseneken, GuidoGuidoGroeseneken2021-10-282021-10-2820201616-301Xhttps://imec-publications.be/handle/20.500.12860/34690MoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contactsJournal articlehttps://doi.org/10.1002/adfm.201905970