Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Yu, HaoHaoYuYadav, SachinSachinYadavO'Sullivan, BarryBarryO'SullivanLin, Tzu-HengTzu-HengLinRathi, AartiAartiRathiAlian, AlirezaAlirezaAlianWu, Tian-LITian-LIWuElkashlan, RanaRanaElkashlanBanerjee, SourishSourishBanerjeePeralagu, UthayasankaranUthayasankaranPeralaguParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2025-04-292024-10-302025-04-2920240018-9383WOS:001338117500001https://imec-publications.be/handle/20.500.12860/44698Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTsJournal article10.1109/TED.2024.3473892WOS:001338117500001