Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeysYoung, E.E.Young2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9603Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistorsJournal article