Influence of extensions implantation on selective epitaxial growth of Si used for production of FINFET raised source/drains

Hikavyy, AndriyAndriyHikavyyCollaert, NadineNadineCollaertRooyackers, RitaRitaRooyackersLeys, FrederikFrederikLeysLoo, RogerRogerLoo2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13878Influence of extensions implantation on selective epitaxial growth of Si used for production of FINFET raised source/drainsProceedings paper