Demonstration of lithium niobate integration on a 200-mm silicon photonics wafer using transfer printing

Niels, MargotMargotNielsVissers, EwoudEwoudVissersVanackere, TomTomVanackereMoerman, ArnoArnoMoermanGuo, XinXinGuoGeerinck, PeterPeterGeerinckSoltanian, EmadEmadSoltanianZhang, JingJingZhangJanssen, SofieSofieJanssenVerheyen, PeterPeterVerheyenSingh, NehaNehaSinghBode, DieterDieterBodeDavi, MartinMartinDaviFerraro, FilippoFilippoFerraroAbsil, PhilippePhilippeAbsilBalakrishnan, SadhishkumarSadhishkumarBalakrishnanVan Campenhout, JorisJorisVan CampenhoutHaensch, SebastianSebastianHaenschMai, HanhHanhMaiSingh, NishantNishantSinghRoelkens, GuntherGuntherRoelkensUvin, SarahSarahUvinBillet, MaximilienMaximilienBilletKuyken, BartBartKuyken2025-08-252025-08-2520250146-9592WOS:001551093100003https://imec-publications.be/handle/20.500.12860/46109We present a scalable approach for the heterogeneous integration of lithium niobate onto silicon photonics platforms using wafer-scale micro-transfer printing. This approach enables the incorporation of efficient, high-speed modulators while maintaining compatibility with back-end processing. Electro-optic modulators with a length of 7 mm, fabricated with this technology, achieve a half-wave voltage of 4 V and a bandwidth exceeding 70 GHz. Furthermore, as proof of concept, we demonstrate the integration of more than 200 lithium niobate photonic structures directly on a 200-mm wafer and characterize their passive optical properties.Demonstration of lithium niobate integration on a 200-mm silicon photonics wafer using transfer printingJournal article10.1364/OL.564405WOS:001551093100003MACH-ZEHNDER MODULATORMEDLINE:40751964