Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Nagano, FuyaFuyaNaganoInoue, F.F.InouePhommahaxay, AlainAlainPhommahaxayPeng, LanLanPengChancerel, FrancoisFrancoisChancerelNaser, HasanHasanNaserBeyer, GeraldGeraldBeyerUedono, A.A.UedonoBeyne, EricEricBeyneDe Gendt, StefanStefanDe GendtIacovo, SerenaSerenaIacovo2024-04-252023-03-252024-04-2520232162-8769WOS:000942185200001https://imec-publications.be/handle/20.500.12860/41368Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin ResonanceJournal article10.1149/2162-8777/acbe18WOS:000942185200001SICN