Zhang, XiaotianXiaotianZhangTrainor, NicholasNicholasTrainorMc Knight, Thomas V.Thomas V.Mc KnightGraves, Andrew R.Andrew R.GravesWu, ZhenhuaZhenhuaWuXu, LeiLeiXuZheng, XudongXudongZhengZhang, TianyiTianyiZhangZhu, JiadiJiadiZhuPalacios, TomasTomasPalaciosKong, JingJingKongGroven, BenjaminBenjaminGrovenTian, BoboBoboTianDuan, ChungangChungangDuanChu, JunhaoJunhaoChuRedwing, Joan M.Joan M.Redwing2026-01-272026-01-2720252662-8449https://imec-publications.be/handle/20.500.12860/58743Metal–organic chemical vapour deposition (MOCVD), a cornerstone of III–V semiconductor manufacturing, is emerging as a pivotal technique for the scalable synthesis of two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDs). This Primer traces the evolution of MOCVD, from its origins in epitaxial growth of conventional semiconductors to its modern role in producing wafer-scale, high-quality 2D layers and heterostructures. We provide a comprehensive overview of the technique, detailing its experimental apparatus, in situ characterization tools and process conditions with a focus on current applications including epitaxy of TMD monolayers, high- and low-temperature growth of TMDs and synthesis of other 2D metal chalcogenides. This Primer also highlights applications enabled by TMD MOCVD in 3D complementary metal–oxide–semiconductor integration, photonic and optoelectronics devices, and direct integration of 2D films onto flexible polymers for wearable electronics, underscoring the compatibility of MOCVD with industrial processes. By discussing the current limitations and further directions of 2D MOCVD, this Primer positions MOCVD as a key transformative tool for next-generation electronics, photonics and flexible technologies.engJournal article review10.1038/s43586-025-00429-4WOS:001571014000001SINGLE-SOURCE PRECURSORSLARGE-AREAGALLIUM SULFIDETRANSPORT-PROPERTIESGRAIN-BOUNDARIESMOCVD GROWTHPHASEMOS2MONOLAYERSPRESSURES