Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies

Claes, DieterDieterClaesFranco, JacopoJacopoFrancoCollaert, NadineNadineCollaertLinten, DimitriDimitriLintenHeyns, MarcMarcHeyns2021-10-282021-10-2820200021-8979https://imec-publications.be/handle/20.500.12860/34910Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologiesJournal articlehttps://doi.org/10.1063/5.0006110