Transient overshoot of sub-10nm bulk FinFET ESD diodes with S/D epitaxy stressor

Chen, Shih-HungShih-HungChenLinten, DimitriDimitriLintenHellings, GeertGeertHellingsSimicic, MarkoMarkoSimicicChiarella, ThomasThomasChiarellaEyben, PierrePierreEybenKubicek, StefanStefanKubicekRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32695Transient overshoot of sub-10nm bulk FinFET ESD diodes with S/D epitaxy stressorProceedings paperhttps://ieeexplore.ieee.org/document/8870001