Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Chen, ZequanZequanChenUren, Michael J.Michael J.UrenHuang, PengPengHuangSanyal, IndraneelIndraneelSanyalSmith, Matthew D.Matthew D.SmithVohra, AnuragAnuragVohraKumar, SujitSujitKumarDecoutere, StefaanStefaanDecoutereBakeroot, BenoitBenoitBakerootKuball, MartinMartinKuball2025-06-192024-09-112025-06-1920240003-6951WOS:001300368200002https://imec-publications.be/handle/20.500.12860/44462Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substratesJournal article10.1063/5.0222572WOS:001300368200002CARBON