Chen, Shih-HungShih-HungChenLin, Yueh-ChinYueh-ChinLinLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzHellings, GeertGeertHellingsChang, Edward YiEdward YiChangGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-2020120741-3106https://imec-publications.be/handle/20.500.12860/20440Influence of InGaP and AlGaAs Schottky layers on ESD robustness in GaAs pHEMTsJournal article