The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration

Kaushik, VidyaVidyaKaushikDe Gendt, StefanStefanDe GendtCarter, RichardRichardCarterClaes, MartineMartineClaesRöhr, ErikaErikaRöhrPantisano, LuigiLuigiPantisanoKluth, JonJonKluthKerber, AndreasAndreasKerberCosnier, VincentVincentCosnierCartier, EduardEduardCartierTsai, WilmanWilmanTsaiYoung, EdwardEdwardYoungGreen, MartinMartinGreenChen, JerryJerryChenJang, S.A.S.A.JangLin, S.S.LinDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtManabe, YukikoYukikoManabeRichard, OlivierOlivierRichardZhao, ChaoChaoZhaoBender, HugoHugoBenderCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7722The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integrationProceedings paper