Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach

Noda, TaijiTaijiNodaMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersHellings, GeertGeertHellingsVrancken, ChristaChristaVranckenEyben, PierrePierreEybenThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchiVandervorst, WilfriedWilfriedVandervorst2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21209Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approachProceedings paper