Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory Application

Barci, MarinelaMarinelaBarciLeonelli, DanieleDanieleLeonelliZhou, XueXueZhouWang, XiaojieXiaojieWangGarbin, DanieleDanieleGarbinJayakumar, GaneshGaneshJayakumarWitters, ThomasThomasWittersFranchina Vergel, NathaliNathaliFranchina VergelKundu, ShreyaShreyaKunduVadakupudhu Palayam, SenthilSenthilVadakupudhu PalayamJiao, HuifangHuifangJiaoWu, HaoHaoWuKar, Gouri SankarGouri SankarKar2023-03-232022-10-202022-12-152023-03-232022-110018-9383WOS:000865072600001https://imec-publications.be/handle/20.500.12860/40595Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory ApplicationJournal article10.1109/TED.2022.3209639WOS:000865072600001