Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation

Kikuchi, YoshiakiYoshiakiKikuchiHopf, TobyTobyHopfMannaert, GeertGeertMannaertEveraert, Jean-LucJean-LucEveraertKubicek, StefanStefanKubicekEyben, PierrePierreEybenWaite, AndrewAndrewWaiteBorniquel, JoseJoseBorniquelVariam, NaushadNaushadVariamMocuta, DanDanMocutaHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-2720190038-1101https://imec-publications.be/handle/20.500.12860/33295Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantationJournal articlehttps://doi.org/10.1016/j.sse.2018.11.003