Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface

Matsu, TakayukiTakayukiMatsuLi, YiYiLiHsu, MarkMarkHsuMerckling, ClementClementMercklingOulton, RupertRupertOultonCohen, LesleyLesleyCohenMaier, StefanStefanMaier2021-10-252021-10-2520181616-301Xhttps://imec-publications.be/handle/20.500.12860/31314Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interfaceJournal articlehttps://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201705829