Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Procel, Luis MiguelLuis MiguelProcelTrojman, LionelLionelTrojmanMoreno, J.J.MorenoCrupi, FeliceFeliceCrupiMaccaronio, V.V.MaccaronioDegraeve, RobinRobinDegraeveGoux, LudovicLudovicGouxSimoen, EddyEddySimoen2021-10-212021-10-2120130021-8979https://imec-publications.be/handle/20.500.12860/22958Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memoriesJournal article