Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

Ponton, DavideDavidePontonPalestri, P.P.PalestriEsseni, D.D.EsseniSelmi, L.L.SelmiTiebout, M.M.TieboutParvais, BertrandBertrandParvaisSiprak, D.D.SiprakKnoblinger, G.G.Knoblinger2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16037Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devicesJournal article