Inline evaluation of MOS capacitor properties using SEM transient signals

Shirasaki, YasuhiroYasuhiroShirasakiYachi, KazufumiKazufumiYachiHu, YajianYajianHuShoji, MinamiMinamiShojiArimura, HiroakiHiroakiArimuraMitard, JeromeJeromeMitardLorusso, GianGianLorussoHoriguchi, NaotoNaotoHoriguchi2025-07-282025-07-282025978-1-5106-8638-00277-786XWOS:001514426300105https://imec-publications.be/handle/20.500.12860/45952Inline evaluation of MOS capacitor properties using SEM transient signalsProceedings paper10.1117/12.3049839978-1-5106-8639-7WOS:001514426300105