TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Buhler, RudolfRudolfBuhlerEneman, GeertGeertEnemanFavia, PaolaPaolaFaviaWitters, LiesbethLiesbethWittersVincent, BenjaminBenjaminVincentHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooBender, HugoHugoBenderCollaert, NadineNadineCollaertSimoen, EddyEddySimoenMartino, JoaoJoaoMartinoClaeys, CorCorClaeys2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/25027TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7041203