Kandybka, IrynaIrynaKandybkaKumar, PawanPawanKumarMedina Silva, HenryHenryMedina SilvaGroven, BenjaminBenjaminGrovenMehta, Ankit NalinAnkit NalinMehtaShi, YuanyuanYuanyuanShiSmets, QuentinQuentinSmetsSchram, TomTomSchramSingh, DhirendraDhirendraSinghBanerjee, SreetamaSreetamaBanerjeeLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarMorin, PierrePierreMorinDelabie, AnneliesAnneliesDelabie2026-09-222026-09-2220262366-9608https://imec-publications.be/handle/20.500.12860/60450<jats:title>ABSTRACT</jats:title> <jats:p> Single‐crystalline molybdenum disulfide (MoS <jats:sub>2</jats:sub> ) emerges as a leading n‐type channel material for high‐performance electronic devices in the angstrom era of computing. Chemical vapor epitaxy of single‐crystalline MoS <jats:sub>2</jats:sub> relies on sapphire template engineering to impose a preferred crystalline orientation. A challenge of these approaches is to control the within‐wafer statistical variance of the MoS <jats:sub>2</jats:sub> orientation when sapphire substrates are manufactured to semiconductor industry‐standard specifications and wafer size. Here, we report single‐crystalline MoS <jats:sub>2</jats:sub> on sapphire by metal‐organic chemical vapor deposition (MOCVD), a mainstream semiconductor manufacturing method, without relying on template‐engineering. By lowering the precursor adsorption rate in the mass‐transport‐limited reaction regime, the MoS <jats:sub>2</jats:sub> nucleation and growth rate slows sufficiently to favor epitaxy, initially with 0° and 60°‐oriented crystals. Although a minority of 60°‐oriented crystals deposit, a single‐crystalline MoS <jats:sub>2</jats:sub> monolayer forms through recrystallization of 60°‐oriented domains during and after MoS <jats:sub>2</jats:sub> monolayer coalescence. As a result, single‐crystalline 1.1 MoS <jats:sub>2</jats:sub> monolayer exhibits carrier mobilities of 30 ± 5 cm <jats:sup>2</jats:sup> V <jats:sup>−1</jats:sup> s <jats:sup>−1</jats:sup> in transistors fabricated through a 300 mm bonding‐to‐wafer route. Recrystallization during chemical vapor epitaxy presents a key mechanism to modulate crystal defect structures in transition metal dichalcogenides and is compatible with both bonding‐to‐wafer and monolithic integration approaches. </jats:p>engJournal article10.1002/smtd.70892WOS:001830249500001MOBILITYMEDLINE:42504044