Thick crack-free n-type GaN grown on 4 inch silicon(111) substrates by MOVPE

Cheng, KaiKaiChengLeys, MaartenMaartenLeysMotsnyi, VasylVasylMotsnyiDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13508Thick crack-free n-type GaN grown on 4 inch silicon(111) substrates by MOVPEProceedings paper