Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

Date, LucienLucienDateRittersma, ChrisChrisRittersmaMassoubre, D.D.MassoubrePonomarev, YouriYouriPonomarevRoozeboom, F.F.RoozeboomPique, DidierDidierPiqueVan Autryve, LucLucVan AutryveVan Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymax2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7385Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applicationsProceedings paper