Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques

Gaubas, EugenijusEugenijusGaubasVanhellemont, JanJanVanhellemontSimoen, EddyEddySimoenClaeys, CorCorClaeysClauws, P.P.ClauwsKraner, H. W.H. W.KranerVilkelis, G.G.Vilkelis2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1228Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniquesProceedings paper