Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

Vohra, AnuragAnuragVohraPourtois, GeoffreyGeoffreyPourtoisLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorst2022-02-222022-02-2220210021-8979WOS:000745982300001https://imec-publications.be/handle/20.500.12860/39026Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activationJournal article10.1063/5.0064952WOS:000745982300001CHEMICAL-VAPOR-DEPOSITIONDIFFUSIONGEVACANCYEXCHANGESILICONSI