Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling

Ramesh, SivaSivaRameshIvanov, TsvetanTsvetanIvanovSibaja-Hernandez, ArturoArturoSibaja-HernandezAlian, AliRezaAliRezaAlianCamerotto, ElisabethElisabethCamerottoMilenin, AlexeyAlexeyMileninPinna, NicoloNicoloPinnaEl Kazzi, S.S.El KazziLin, DennisDennisLinLagrain, PieterPieterLagrainFavia, PaolaPaolaFaviaBender, HugoHugoBenderCollaert, NadineNadineCollaertDe Meyer, K.K.De Meyer2022-11-172022-07-282022-11-172022-11-1720220021-8979WOS:000827590900003https://imec-publications.be/handle/20.500.12860/40177Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scalingJournal article10.1063/5.0092535WOS:000827590900003TRANSMISSION-LINE MODELOHMIC CONTACTSINGAASSURFACE