Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

Griffoni, AlessioAlessioGriffoniGerardin, S.S.GerardinMeneghesso, G.G.MeneghessoPaccagnella, A.A.PaccagnellaSimoen, EddyEddySimoenPut, SofieSofiePutClaeys, CorCorClaeys2021-10-172021-10-1720080018-9499https://imec-publications.be/handle/20.500.12860/13812Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETsJournal article