Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Goncalez Filho, WalterWalterGoncalez FilhoBorga, MatteoMatteoBorgaGeens, KarenKarenGeensKhan, Md ArifMd ArifKhanCingu, DeepthiDeepthiCinguChatterjee, UrmimalaUrmimalaChatterjeeVohra, AnuragAnuragVohraDecoutere, StefaanStefaanDecoutereBakeroot, BenoitBenoitBakeroot2025-06-192024-04-012025-06-1920240003-6951WOS:001182719900014https://imec-publications.be/handle/20.500.12860/43754Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stabilityJournal article10.1063/5.0191973WOS:001182719900014