Leonelli, DanieleDanieleLeonelliVandooren, AnneAnneVandoorenRooyackers, RitaRitaRooyackersDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17468Optimization of tunnel FETs: Impact of gate oxide thickness, implantation and annealing conditionsProceedings paper