Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET

Vincent, BenjaminBenjaminVincentWitters, LiesbethLiesbethWittersRichard, OlivierOlivierRichardHikavyy, AndriyAndriyHikavyyBender, HugoHugoBenderLoo, RogerRogerLooCaymax, MattyMattyCaymaxThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21806Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFETMeeting abstract