Wu, Wei-MinWei-MinWuKer, Ming-DouMing-DouKerChen, Shih-HungShih-HungChenSibaja-Hernandez, ArturoArturoSibaja-HernandezYadav, SachinSachinYadavPeralagu, UthayasankaranUthayasankaranPeralaguYu, HaoHaoYuAlian, AliRezaAliRezaAlianPutcha, VamsiVamsiPutchaParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaertGroeseneken, GuidoGuidoGroeseneken2022-08-312022-08-032022-08-312022-01-250018-9383WOS:000748264000001https://imec-publications.be/handle/20.500.12860/40201Journal article10.1109/TED.2022.3141038WOS:000748264000001Electrical & electronic engineeringElectrostatic dischargehigh electron mobility transistor (HEMT)human body model (HBM)radio frequency (RF)gallium nitride (GaN)