Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

Merckling, ClementClementMercklingWaldron, NiamhNiamhWaldronJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoCollaert, NadineNadineCollaertCaymax, MattyMattyCaymaxVancoille, EricEricVancoilleBarla, KathyKathyBarlaThean, AaronAaronTheanHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorst2021-10-222021-10-222014-010021-8979https://imec-publications.be/handle/20.500.12860/24244Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineeringJournal articlehttp://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4862044