Kim, JinjuJinjuKimCho, Moon JuMoon JuChoPantisano, LuigiLuigiPantisanoChiarella, ThomasThomasChiarellaTogo, MitsuhiroMitsuhiroTogoHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroesenekenLee, ByoungHunByoungHunLee2021-10-202021-10-202012-04https://imec-publications.be/handle/20.500.12860/20937Electrode process dependent NBTI chracteristics of TiN gate FinFETsProceedings paper