Srivastava, PuneetPuneetSrivastavaOprins, HermanHermanOprinsVan Hove, MarleenMarleenVan HoveDas, JoJoDasMalinowski, PawelPawelMalinowskiBakeroot, BenoitBenoitBakerootMarcon, DenisDenisMarconVisalli, DomenicaDomenicaVisalliKang, XuanwuXuanwuKangLenci, SilviaSilviaLenciGeens, KarenKarenGeensViaene, JohnJohnViaeneCheng, KaiKaiChengLeys, MaartenMaartenLeysDe Wolf, IngridIngridDe WolfDecoutere, StefaanStefaanDecoutereMertens, RobertRobertMertensBorghs, GustaafGustaafBorghs2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19825Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performanceProceedings paper