Study of the interplay between dry etch and wet clean in patterning La2O3/HfO2 containing high-k/metal gate stacks

Vos, IngridIngridVosHellin, DavidDavidHellinVrancken, ChristaChristaVranckenVecchio, EmmaEmmaVecchioParaschiv, VasileVasileParaschivVertommen, JohanJohanVertommenBoullart, WernerWernerBoullart2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16506Study of the interplay between dry etch and wet clean in patterning La2O3/HfO2 containing high-k/metal gate stacksMeeting abstract