Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process

Kang, JinFengJinFengKangYu, HongYuHongYuYuRen, C.C.RenYang, H.H.YangSa, N.N.SaLiu, X.Y.X.Y.LiuHan, R.Q.R.Q.HanLi, M.F.M.F.LiChan, D.S.H.D.S.H.ChanKwong, D.L.D.L.Kwong2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10676Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature processProceedings paper