Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Caymax, MattyMattyCaymaxPoortmans, JefJefPoortmansVan Ammel, AnnemieAnnemieVan AmmelLibezny, MilanMilanLibeznyNijs, JohanJohanNijsMertens, RobertRobertMertens2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/71Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilitiesJournal article