Vandemaele, MichielMichielVandemaeleChuang, Kai-HsinKai-HsinChuangBury, ErikErikBuryTyaginov, StanislavStanislavTyaginovGroeseneken, GuidoGuidoGroesenekenKaczer, BenBenKaczer2022-01-272021-11-022022-01-2720201541-7026WOS:000612717200001https://imec-publications.be/handle/20.500.12860/38215The Influence of Gate Bias on the Anneal of Hot-Carrier DegradationProceedings paper978-1-7281-3199-3WOS:000612717200001PASSIVATIONRECOVERYKINETICSCENTERSSI/SIO2H-2