GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect

You, ShuzhenShuzhenYouLi, XiangdongXiangdongLiGeens, KarenKarenGeensPosthuma, NielsNielsPosthumaZhao, MingMingZhaoLiang, HuHuLiangGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2022-02-252022-02-2520210268-1242WOS:000612625300001https://imec-publications.be/handle/20.500.12860/39156GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effectJournal article10.1088/1361-6641/abdbc1WOS:000612625300001HEMTSTRANSISTORS