Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits

Witters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertNackaerts, AxelAxelNackaertsDemand, MarcMarcDemandDemuynck, StevenStevenDemuynckDelvaux, ChristieChristieDelvauxLauwers, AnneAnneLauwersBaerts, ChristinaChristinaBaertsBeckx, StephanStephanBeckxBoullart, WernerWernerBoullartBrus, StephanStephanBrusDegroote, BartBartDegrootede Marneffe, Jean-FrancoisJean-Francoisde MarneffeDixit, AbhisekAbhisekDixitDe Meyer, KristinKristinDe MeyerErcken, MoniqueMoniqueErckenGoodwin, MichaelMichaelGoodwinHendrickx, EricEricHendrickxHeylen, NancyNancyHeylenJaenen, PatrickPatrickJaenenLaidler, DavidDavidLaidlerLeray, PhilippePhilippeLerayLocorotondo, SabrinaSabrinaLocorotondoMaenhoudt, MireilleMireilleMaenhoudtMoelants, MyriamMyriamMoelantsPollentier, IvanIvanPollentierRonse, KurtKurtRonseRooyackers, RitaRitaRooyackersVan Aelst, JokeJokeVan AelstVandenberghe, GeertGeertVandenbergheVandeweyer, TomTomVandeweyerVanhaelemeersch, SergeSergeVanhaelemeerschVan Hove, MarleenMarleenVan HoveVan Olmen, JanJanVan OlmenVerhaegen, StafStafVerhaegenVersluijs, JankoJankoVersluijsVrancken, ChristaChristaVranckenWiaux, VincentVincentWiauxWillems, PatrickPatrickWillemsWouters, Johan M. D.Johan M. D.WoutersJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11566Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuitsProceedings paper