Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects

Kilchytska, ValeriyaValeriyaKilchytskaLederer, DimitriDimitriLedererCollaert, NadineNadineCollaertJean-Pierre, RaskinRaskinJean-PierreFlandre, DenisDenisFlandre2021-10-162021-10-162005-10https://imec-publications.be/handle/20.500.12860/10695Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effectsJournal article