Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness

Kol'dyaev, VictorVictorKol'dyaevClerix, AndreAndreClerixDeferm, LudoLudoDefermVan Overstraeten, RogerRogerVan Overstraeten2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2670Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thicknessJournal article