Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach

Noda, TajiTajiNodaWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardRosseel, ErikErikRosseelHellings, GeertGeertHellingsVrancken, ChristaChristaVranckenBender, HugoHugoBenderHoffmann, T.Y.T.Y.HoffmannHoriguchi, NaotoNaotoHoriguchiVandervorst, WilfriedWilfriedVandervorst2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19489Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approachProceedings paper