Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

Rosseel, ErikErikRosseelDhayalan, Sathish KumarSathish KumarDhayalanHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooProfijt, HaraldHaraldProfijtKohen, DavidDavidKohenKubicek, StefanStefanKubicekChiarella, ThomasThomasChiarellaYu, HaoHaoYuHoriguchi, NaotoNaotoHoriguchiMocuta, DanDanMocutaBarla, KathyKathyBarlaThean, AaronAaronTheanBartlett, GregGregBartlettMargetis, JoeJoeMargetisBhargava, NaipurNaipurBhargavaTolle, JohnJohnTolle2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27238Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETsProceedings paperhttp://ecst.ecsdl.org/content/75/8/347.abstract