Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling

Pourtois, GeoffreyGeoffreyPourtoisHoussa, MichelMichelHoussaDe Jaeger, BriceBriceDe JaegerKaczer, BenBenKaczerLeys, FrederikFrederikLeysMeuris, MarcMarcMeurisCaymax, MattyMattyCaymaxGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12738Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modelingJournal articlehttp://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=APPLAB&ONLINE=YES&smode=strresults&sort=chron&maxdisp=25&threshold=0&