Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

Grasser, T.T.GrasserKaczer, BenBenKaczerAichinger, T.T.AichingerGoes, W.W.GoesNelhiebel, M.M.Nelhiebel2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13804Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacksProceedings paper