Wang, X.P.X.P.WangLi, M.F.M.F.LiYu, HongYuHongYuYuYang, J.J.J.J.YangLoh, W.Y.W.Y.LohZhu, C.X.C.X.ZhuDu, A.Y.A.Y.DuTrigg, A.D.A.D.TriggZhang, G.G.ZhangSik, H.W.H.W.SikRen, C.C.RenLim, AndyAndyLimLee, RinusRinusLeeYu, X.F.X.F.YuChen, J.D.J.D.ChenChin, AlbertAlbertChinYeo, Y.C.Y.C.YeoBiesemans, SergeSergeBiesemansChua, T.C.T.C.ChuaNouri, F.F.NouriLo, PatrickPatrickLoKwong, D.L.D.L.Kwong2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13212High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectricProceedings paper