Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment

Liang, HuHuLiangCarlson, EricEricCarlsonZhao, MingMingZhaoBorniquel, JoseJoseBorniquelKang, SangWangSangWangKangJun, SungwonSungwonJunRosseel, ErikErikRosseelL'abbe, CarolineCarolineL'abbeDekoster, JohanJohanDekoster2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21025Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatmentMeeting abstract