Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer

Lieten, RubenRubenLietenDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysDerluyn, JoffJoffDerluynKuijk, MaartenMaartenKuijkBorghs, GustaafGustaafBorghs2021-10-172021-10-1720080022-0248https://imec-publications.be/handle/20.500.12860/14037Growth of InN on Ge(111) by molecular beam epitaxy using a GaN bufferJournal articlehttp://dx.doi.org/10.1016/j.jcrysgro.2007.12.046