Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1373Mobility degradation influence on the SOI MOSFET channel length extraction at 77 KJournal article